GI03N70 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

The GI03N70 by GTM is a N-CHANNEL ENHANCEMENT MODE POWER MOSFET. Below is the official datasheet preview.

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GI03N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Official preview page of the **GI03N70** N-CHANNEL ENHANCEMENT MODE POWER MOSFET datasheet (GTM).

Datasheet Details

Part number	GI03N70
Manufacturer	GTM
File Size	243.26 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI03N70_GTM.pdf
Additional preview pages of the GI03N70 datasheet.

GI03N70 Product details

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 4.0 3.3A The GI03N70 is specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.The TO-251 package is available for low-profile applications and suited for AC/DC converters. Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Speed

Features

Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 600 ±30 3.3 2.1 13.2 45 0.36 85 3.3 3.3 -55.

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Published: Sep 27, 2007 |