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GI01N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GI01N60 Description

Pb Free Plating Product ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B GI01N60 .
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 8 1.

GI01N60 Features

* Package Dimensions TO-251 REF. www. DataSheet4U. com A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Vol

GI01N60 Applications

* and suited for AC/DC converters.
* Dynamic dv/dt Rating
* Simple Drive Requirement
* Repetitive Avalanche Rated

📥 Download Datasheet

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Datasheet Details

Part number
GI01N60
Manufacturer
GTM
File Size
317.70 KB
Datasheet
GI01N60_GTM.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM
GTM GI01N60-like datasheet