GI01N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

Pb Free Plating Product ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B GI01N60 .
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 8 1.

📥 Download Datasheet

GI01N60 Datasheet Preview — Preview of GI01N60 PDF

Datasheet Specifications

Part number: GI01N60
Manufacturer: GTM
File Size: 317.70 KB
Datasheet: GI01N60_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions TO-251 REF. www. DataSheet4U. com A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Vol

Applications

* and suited for AC/DC converters.
* Dynamic dv/dt Rating
* Simple Drive Requirement
* Repetitive Avalanche Rated

GI01N60 Distributors

📁 Related Datasheet

GI01-04 GI01-05 GI01-06 GI01-64 GI01-64D GI01-65

📌 All Tags

GI01N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

GTM GI01N60-like datasheet