GI08P10 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

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Datasheet Details

Part number	GI08P10
Manufacturer	GTM
File Size	321.11 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI08P10_GTM.pdf

GI08P10 Product details

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -100V 200m -8A The GI08P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-251 package is universally preferred for all commercial-industrial through hole applications. Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant

Features

Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings -100 ±32 -8 -6 -32 45 0.36 100 -8 -55 ~ +1.

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Published: Sep 27, 2007 |