GJ1182 PNP SILICON EPITAXIAL PLANAR TRANSISTOR

GTM

Description

www.DataSheet4U.com CORPORATION ISSUED DATE :2005/10/06 REVISED DATE : GJ1182 PNP SILICON EPITAXIAL PLANAR TRANSISTOR .
The GJ1182 is designed for medium power amplifier applications. Low collector saturation voltage : VCE(sat)=-0.

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Datasheet Specifications

Part number: GJ1182
Manufacturer: GTM
File Size: 304.87 KB
Datasheet: GJ1182_GTM.pdf
Description: PNP SILICON EPITAXIAL PLANAR TRANSISTOR

Features

* Low collector saturation voltage : VCE(sat)=-0.5V(Typ. ) Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15

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GJ1182 PNP SILICON EPITAXIAL PLANAR TRANSISTOR GTM

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