GJ1182 Datasheet, Transistor, GTM

GJ1182 Features

• Transistor The GJ1182 is designed for medium power amplifier applications. Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) ISSUED DATE :2005/10/06 REVISED DATE : P NP S ILI CO N E PITAX

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GJ1182

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GTM

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📄 Datasheet

Description:

Pnp silicon epitaxial planar transistor. Features The GJ1182 is designed for medium power amplifier applications. Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) ISS

GJ1182 Application

• Applications Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) ISSUED DATE :2005/10/06 REVISED DATE : P NP S ILI CO N E PITAX I AL PL ANAR

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GJ1182

GTM

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