Datasheet Details
- Part number
- GJ1182
- Manufacturer
- GTM
- File Size
- 304.87 KB
- Datasheet
- GJ1182_GTM.pdf
- Description
- PNP SILICON EPITAXIAL PLANAR TRANSISTOR
GJ1182 Description
www.DataSheet4U.com CORPORATION ISSUED DATE :2005/10/06 REVISED DATE : GJ1182 PNP SILICON EPITAXIAL PLANAR TRANSISTOR .
The GJ1182 is designed for medium power amplifier applications.
Low collector saturation voltage : VCE(sat)=-0.
GJ1182 Features
* Low collector saturation voltage : VCE(sat)=-0.5V(Typ. )
Package Dimensions
TO-252
REF. A B C D E F S
Millimeter
Min. Max. 6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF. 0.70
0.90
0.60
0.90
REF. G H J K L M R
Millimeter
Min. Max. 0.50 0.70
2.20 2.40
0.45 0.55
0
0.15
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