GJ1386 PNP EPITAXIAL SILICON TRANSISTOR

GTM

Description

www.DataSheet4U.com ISSUED DATE :2005/07/25 REVISED DATE : GJ1386 PNP EPITAXIAL SILICON TRANSISTOR .
The GJ1386 is designed for low frequency applications. Low VCE(sat) =-0. Excellent DC current gain chara.

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Datasheet Specifications

Part number: GJ1386
Manufacturer: GTM
File Size: 185.63 KB
Datasheet: GJ1386_GTM.pdf
Description: PNP EPITAXIAL SILICON TRANSISTOR

Features

* Low VCE(sat) =-0.55V(Typ. ) (IC/IB=-4A/-0.1A)
* Excellent DC current gain characteristics Package Dimensions TO-252 Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCE

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GJ1386 PNP EPITAXIAL SILICON TRANSISTOR GTM

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