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GJ1386

PNP EPITAXIAL SILICON TRANSISTOR

GJ1386 Features

* Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A)

* Excellent DC current gain characteristics Package Dimensions TO-252 Absolute Maximum Ratings at Ta = 25ะบ Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCE

GJ1386 Datasheet (185.63 KB)

Preview of GJ1386 PDF

Datasheet Details

Part number:

GJ1386

Manufacturer:

GTM

File Size:

185.63 KB

Description:

Pnp epitaxial silicon transistor.

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GJ1386 PNP EPITAXIAL SILICON TRANSISTOR GTM

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