GJ1386 - PNP EPITAXIAL SILICON TRANSISTOR

Datasheet Details

Part number	GJ1386
Manufacturer	GTM
File Size	185.63 KB
Description	PNP EPITAXIAL SILICON TRANSISTOR
Datasheet	GJ1386_GTM.pdf

The GJ1386 is designed for low frequency applications.

Low VCE(sat) =-0.55V(Typ. ) (IC/IB=-4A/-0.1A).
Excellent DC current gain characteristics Package Dimensions TO-252 Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC.
Collector Current (Pulse) IC Total Power Dissipation (TC=25к) PD REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.

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Published: Sep 4, 2007 |