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GSS9922E POWER MOSFET

GSS9922E Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/04/06 REVISED DATE : GSS9922E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) I.
Features Package Dimensions REF.

GSS9922E Features

* Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous D

GSS9922E Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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Datasheet Details

Part number
GSS9922E
Manufacturer
GTM
File Size
289.12 KB
Datasheet
GSS9922E_GTM.pdf
Description
POWER MOSFET

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POWER MOSFET GTM
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