GSS9926E POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/07 REVISED DATE :2005/09/29C GSS9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDS.
Features Package Dimensions REF.

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Datasheet Specifications

Part number: GSS9926E
Manufacturer: GTM
File Size: 325.19 KB
Datasheet: GSS9926E_GTM.pdf
Description: POWER MOSFET

Features

* Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drai

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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GSS9926E POWER MOSFET GTM

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