GSS9926 POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/05/27 REVISED DATE :2006/11/15E GSS9926 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS.
The GSS9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectivene.

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Datasheet Specifications

Part number: GSS9926
Manufacturer: GTM
File Size: 332.46 KB
Datasheet: GSS9926_GTM.pdf
Description: POWER MOSFET

Features

* Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous D

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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GSS9926 POWER MOSFET GTM

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