G3R160MT12J - Silicon Carbide MOSFET

GeneSiC

G3R160MT12J Description

G3R160MT12J 1200 V 160 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode .

G3R160MT12J Features

* G3R™ (3rd Generation) Technology
* Low Temperature Coefficient of RDS(ON)
* Lower QG and Smaller RG(INT)
* Low Device Capacitances (COSS, CRSS)
* LoRing™ - Electromagnetically Optimized Design
* Superior Cost-Performance Index
* Robust Body D

G3R160MT12J Applications

* Solar Inverters
* UPS
* High Voltage DC-DC Converters
* Switched Mode Power Supplies
* Auxiliary Motor Drives
* High Frequency Converters RoHS REACH Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated) Parameter Drain-Source Voltage Gat

📥 Download Datasheet

G3R160MT12J Datasheet Preview — Preview of G3R160MT12J PDF

Datasheet Details

Part number: G3R160MT12J
Manufacturer: GeneSiC
File Size: 3.09 MB
Datasheet: G3R160MT12J-GeneSiC.pdf
Description: Silicon Carbide MOSFET

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Silicon Carbide MOSFET GeneSiC

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