G3R160MT17J - Silicon Carbide MOSFET

GeneSiC

G3R160MT17J Description

G3R160MT17J 1700 V 160 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode .

G3R160MT17J Features

* G3R™ Technology with +15 V Gate Drive
* Softer RDS(ON) v/s Temperature Dependency
* LoRing™ - Electromagnetically Optimized Design
* Smaller RG(INT) and Lower QG
* Low Device Capacitances (COSS, CRSS)
* Superior Cost-Performance Index
* Robus

G3R160MT17J Applications

* Solar Inverter
* EV Fast Charging
* Switched Mode Power Supply (SMPS)
* Auxiliary Power Supply
* High Voltage Converter
* Pulsed Power RoHS REACH Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated) Parameter Drain-Source Voltage Gate-S

📥 Download Datasheet

G3R160MT17J Datasheet Preview — Preview of G3R160MT17J PDF

Datasheet Details

Part number: G3R160MT17J
Manufacturer: GeneSiC
File Size: 1.17 MB
Datasheet: G3R160MT17J-GeneSiC.pdf
Description: Silicon Carbide MOSFET

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Silicon Carbide MOSFET GeneSiC

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