Datasheet4U Logo Datasheet4U.com

GD10MPS12H - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Gen4 Thin Chip Technology for Low VF.
  • Superior Figure of Merit QC.
  • VF.
  • 100% Avalanche (UIL) Tested.
  • Enhanced Surge Current Withstand Capability.
  • Temperature Independent Fast Switching.
  • Low Thermal Resistance.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Package TO-247-2 TM VRRM = IF (TC = 156°C) = QC = 1200 V 10 A 32 nC Case RoHS K A REACH Advantages.
  • Improved System Efficiency.

📥 Download Datasheet

Datasheet preview – GD10MPS12H

Datasheet Details

Part number GD10MPS12H
Manufacturer GeneSiC
File Size 542.02 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GD10MPS12H Datasheet
Additional preview pages of the GD10MPS12H datasheet.

📁 Similar Datasheet

Other Datasheets by GeneSiC

Full PDF Text Transcription

Click to expand full text
GD10MPS12H 1200V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit QC*VF • 100% Avalanche (UIL) Tested • Enhanced Surge Current Withstand Capability • Temperature Independent Fast Switching • Low Thermal Resistance • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Package TO-247-2 TM VRRM = IF (TC = 156°C) = QC = 1200 V 10 A 32 nC Case RoHS K A REACH Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching Applications • Power Factor Correction (PFC) • Solar Inverters •
Published: |