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GD10MPS12A 1200V 10A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit QC*VF • 100% Avalanche (UIL) Tested • Enhanced Surge Current Withstand Capability • Temperature Independent Fast Switching • Low Thermal Resistance • Positive Temperature Coefficient of VF • High dV/dt Ruggedness
Package TO-220-2
TM
VRRM
=
IF (TC = 157°C) =
QC
=
1200 V 10 A 32 nC
Case
RoHS
K
A
REACH
Advantages
• Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching
Applications
• Power Factor Correction (PFC) • Solar Inverters •
GD10MPS12A Datasheet
