The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
GD15MPS17H 1700V 15A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • Low VF for High Temperature Operation
Package TO-247-2
TM
VRRM
=
IF (TC = 158°C) =
QC
=
1700 V 15 A 124 nC
Case
RoHS
K
A
REACH
Advantages
• Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Improved System Efficiency
Applications
• EV Fast Chargers • Solar Inverters • Wind