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GD15MPS17H - Silicon Carbide Schottky Diode

Key Features

  • Gen4 Thin Chip Technology for Low VF.
  • Enhanced Surge and Avalanche Robustness.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • Low Reverse Leakage Current.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF.
  • Low VF for High Temperature Operation Package TO-247-2 TM VRRM = IF (TC = 158°C) = QC = 1700 V 15 A 124 nC Case RoHS K A REACH Advantages.
  • Improved System Effic.

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Datasheet Details

Part number GD15MPS17H
Manufacturer GeneSiC
File Size 515.76 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GD15MPS17H Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GD15MPS17H 1700V 15A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • Low VF for High Temperature Operation Package TO-247-2 TM VRRM = IF (TC = 158°C) = QC = 1700 V 15 A 124 nC Case RoHS K A REACH Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Improved System Efficiency Applications • EV Fast Chargers • Solar Inverters • Wind