GD10MPS17H Description
GD10MPS17H 1700V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode.
GD10MPS17H Key Features
- Gen4 Thin Chip Technology for Low VF
- Enhanced Surge and Avalanche Robustness
- Superior Figure of Merit QC/IF
- Low Thermal Resistance
- Low Reverse Leakage Current
- Temperature Independent Fast Switching
- Positive Temperature Coefficient of VF
- Low VF for High Temperature Operation
- Improved System Efficiency
- High System Reliability