GD10MPS12E Overview
GD10MPS12E 1200V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode.
GD10MPS12E Key Features
- Gen4 Thin Chip Technology for Low VF
- Superior Figure of Merit QC-VF
- 100% Avalanche (UIL) Tested
- Enhanced Surge Current Withstand Capability
- Temperature Independent Fast Switching
- Low Thermal Resistance
- Positive Temperature Coefficient of VF
- High dV/dt Ruggedness
- Improved System Efficiency
- High System Reliability