• Part: GD10MPS12E
  • Description: Silicon Carbide Schottky Diode
  • Category: Diode
  • Manufacturer: GeneSiC
  • Size: 498.26 KB
Download GD10MPS12E Datasheet PDF
GeneSiC
GD10MPS12E
GD10MPS12E is Silicon Carbide Schottky Diode manufactured by GeneSiC.
Features - Gen4 Thin Chip Technology for Low VF - Superior Figure of Merit QC- VF - 100% Avalanche (UIL) Tested - Enhanced Surge Current Withstand Capability - Temperature Independent Fast Switching - Low Thermal Resistance - Positive Temperature Coefficient of VF - High d V/dt Ruggedness Package TO-252-2 VRRM = IF (TC = 160°C) = = 1200 V 10 A 32 n C Case Ro HS REACH Advantages - Improved System Efficiency - High System Reliability - Optimal Price Performance - Reduced Cooling Requirements - Increased System Power Density - Zero Reverse Recovery Current - Easy to Parallel without Thermal Runaway - Enables Extremely Fast Switching Applications - Power Factor Correction (PFC) - Solar Inverters - Battery Chargers - High Frequency Converters - Switched Mode Power Supply (SMPS) - AC/DC Power Supplies - Anti-Parallel / Free-Wheeling Diode - LED and HID...