GD10MPS12E - Silicon Carbide Schottky Diode

Product Overview

GeneSiC

Part number	GD10MPS12E
Manufacturer	GeneSiC
File Size	498.26 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GD10MPS12E Datasheet
Additional preview pages of the GD10MPS12E datasheet.

Gen4 Thin Chip Technology for Low VF.
Superior Figure of Merit QC.
VF.
100% Avalanche (UIL) Tested.
Enhanced Surge Current Withstand Capability.
Temperature Independent Fast Switching.
Low Thermal Resistance.
Positive Temperature Coefficient of VF.
High dV/dt Ruggedness Package TO-252-2 TM VRRM = IF (TC = 160°C) = QC = 1200 V 10 A 32 nC Case RoHS K A REACH Advantages.
Improved System Efficiency.

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Published: Dec 20, 2024 |