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MBR12020CT Silicon Power Schottky Diode

MBR12020CT Description

Silicon Power Schottky Diode .

MBR12020CT Features

* High Surge Capability
* Types from 20 V to 40 V VRRM
* Not ESD Sensitive MBR12020CT thru MBR12040CTR VRRM = 20 V - 40 V IF(AV) = 120 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Condi

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Datasheet Details

Part number
MBR12020CT
Manufacturer
GeneSiC
File Size
717.53 KB
Datasheet
MBR12020CT-GeneSiC.pdf
Description
Silicon Power Schottky Diode

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📌 All Tags

Silicon Power Schottky Diode GeneSiC
GeneSiC MBR12020CT-like datasheet