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GF4435 - P-Channel Enhancement-Mode MOSFET

General Semiconductor

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Datasheet Details

Part number: GF4435
Manufacturer: General Semiconductor
File Size: 179.03 KB
Datasheet: GF4435_GeneralSemiconductor.pdf
Description: P-Channel Enhancement-Mode MOSFET

GF4435 Product details

Features

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters.
Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25°C TA = 70°C (1) A = 25°C unless otherwise noted) Symbol VDS VGS ID IDM PD TJ, Tstg RθJA Limit.

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Published: Jan 26, 2007 |