GF4412 - N-channel Enhancement-mode MOSFET
GF4412 N-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G SO-8 0.197 (5.00) 0.189 (4.80) VDS 30V RDS(ON) 28mΩ ID 7A ® www.DataSheet4U.com 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches and (millimeters) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min.
0.009 (0.23) 0.007 (0.18) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) 0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.035 (0.889) 0.025 (0.635) 0 °
GF4412 Features
* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for Low Voltage DC/DC Converters
* Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-S
