* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for Low Voltage DC/DC Converters
* Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-S
GF4412
General Semiconductor
181.49 KB
N-channel enhancement-mode mosfet.
GF4412
N-Channel Enhancement-Mode MOSFET
H C N T E TRE NF E G
SO-8
0.197 (5.00) 0.189 (4.80)
VDS 30V RDS(ON) 28mΩ ID 7A
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8 5 .
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