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GF4412 Datasheet - General Semiconductor

GF4412 N-channel Enhancement-mode MOSFET

GF4412 N-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G SO-8 0.197 (5.00) 0.189 (4.80) VDS 30V RDS(ON) 28mΩ ID 7A ® www.DataSheet4U.com 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches and (millimeters) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) 0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.035 (0.889) 0.025 (0.635) 0 °.

GF4412 Features

* Advanced Trench Process Technology

* High Density Cell Design for Ultra Low On-Resistance

* Specially Designed for Low Voltage DC/DC Converters

* Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-S

GF4412_GeneralSemiconductor.pdf

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Datasheet Details

Part number:

GF4412

Manufacturer:

General Semiconductor

File Size:

181.49 KB

Description:

N-channel enhancement-mode mosfet.

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GF4412 GF4412 N-channel Enhancement-mode MOSFET General Semiconductor

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