GF4450 - N-Channel Enhancement-Mode MOSFET
www.DataSheet4U.com GF4450 N-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4 VDS 60V RDS(ON) 24mΩ ID 7.5A ® t c u rod P New 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min.
0.009 (0.23) 0.007 (0.18) Dimensions in inches and (millimeters) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) 0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.035 (0.889)
GF4450 Features
* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for Low Voltage DC/DC Converters
* Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-S
