* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for Low Voltage DC/DC Converters
* Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-S
GF4450
General Semiconductor
184.14 KB
N-channel enhancement-mode mosfet.
www.DataSheet4U.com
GF4450
N-Channel Enhancement-Mode MOSFET
H C N T E TRE NF E G
SO-8
0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244.
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