* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for Low Voltage DC/DC Converters
* Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-S
GF4435
General Semiconductor
179.03 KB
P-channel enhancement-mode mosfet.
www.DataSheet4U.com
GF4435
P-Channel Enhancement-Mode MOSFET
H C N T E TRE NF E G
SO-8
0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244.
📁 Related Datasheet
GF4410 N-channel Enhancement-mode MOSFET (General Semiconductor)
GF4412 N-channel Enhancement-mode MOSFET (General Semiconductor)
GF4450 N-Channel Enhancement-Mode MOSFET (General Semiconductor)
GF4141 LOW POWER GROUND FAULT INTERRUPTER (UTC)
GF4146 GROUND FAULT INTERRUPTER (UTC)
GF4149 GROUND FAULT INTERRUPTER (UTC)
GF-1096-1 Coax (ETC)
GF001H Power Switch (ON Semiconductor)
GF063 Cermet Trimmers (Tokyo Cosmos Electric)
GF100N30 IGBT (STMicroelectronics)
