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GF4435 Datasheet - General Semiconductor

GF4435 P-Channel Enhancement-Mode MOSFET

www.DataSheet4U.com GF4435 P-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4 VDS 30V RDS(ON) 20mΩ ID 8.0A ® Dimensions in inches and (millimeters) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) 0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.035 (0.88.

GF4435 Features

* Advanced Trench Process Technology

* High Density Cell Design for Ultra Low On-Resistance

* Specially Designed for Low Voltage DC/DC Converters

* Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-S

GF4435_GeneralSemiconductor.pdf

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Datasheet Details

Part number:

GF4435

Manufacturer:

General Semiconductor

File Size:

179.03 KB

Description:

P-channel enhancement-mode mosfet.

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