GF4410 - N-channel Enhancement-mode MOSFET

General Semiconductor

Datasheet Details

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters.
Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ = 150°C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction)(1) Maximum Power Dissipation TA = 25°C TA = 70°C (1) A = 25°C unless otherwise.

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