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GF4410 Datasheet - General Semiconductor

GF4410 N-channel Enhancement-mode MOSFET

GF4410 N-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G SO-8 0.197 (5.00) 0.189 (4.80) VDS 30V RDS(ON) 13.5mΩ ID 10A ® www.DataSheet4U.com 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches and (millimeters) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) 0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.035 (0.889) 0.025 (0.635) .

GF4410 Features

* Advanced Trench Process Technology

* High Density Cell Design for Ultra Low On-Resistance

* Specially Designed for Low Voltage DC/DC Converters

* Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-S

GF4410_GeneralSemiconductor.pdf

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Datasheet Details

Part number:

GF4410

Manufacturer:

General Semiconductor

File Size:

181.88 KB

Description:

N-channel enhancement-mode mosfet.

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GF4410 GF4410 N-channel Enhancement-mode MOSFET General Semiconductor

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