* The MCIRF2N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters
MKIRF2N65
Global Semiconductor
2.15 MB
Power mosfet.
MCIRF2N65 MFIRF2N65 MKIRF2N65 MJIRF2N65
ID = 2.0A VDS = 650V RDS(on)MAX = 5.0Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID.
📁 Related Datasheet
MKIRF4N65 POWER MOSFET (Global Semiconductor)
MKI100-12E8 IGBT Modules (IXYS)
MKI100-12F8 IGBT Module (IXYS)
MKI41T56 512 bit 64b x8 Serial Access TIMEKEEPER SRAM (ST Microelectronics)
MKI50-06A7 IGBT Modules H-Bridge (IXYS Corporation)
MKI50-12E7 Short Circuit SOA Capability Square RBSOA (IXYS Corporation)
MKI50-12F7 IGBT Module (IXYS)
MKI75-06A7 IGBT Module (IXYS)
MKI75-06A7T IGBT Module (IXYS)
MKI75-12E8 IGBT Module (IXYS)
