Datasheet4U Logo Datasheet4U.com

MKI100-12F8 Datasheet - IXYS

MKI100-12F8 IGBT Module

Advanced Technical Information MKI 100-12F8 IGBT Modules H Bridge Short Circuit SOA Capability Square RBSOA IC25 = 125 A V CES = 1200 V VCE(sat) typ. = 3.3 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 13, 21 1 2 3 4 14, 20 9 10 19 15 11 12 MKI Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 5.6 Ω; TVJ = 125°C RBSOA; clamped inductive load; .

MKI100-12F8 Features

* Fast NPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits

* HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage curre

MKI100-12F8 Datasheet (82.09 KB)

Preview of MKI100-12F8 PDF
MKI100-12F8 Datasheet Preview Page 2

Datasheet Details

Part number:

MKI100-12F8

Manufacturer:

IXYS

File Size:

82.09 KB

Description:

Igbt module.

📁 Related Datasheet

MKI100-12E8 IGBT Modules (IXYS)

MKI41T56 512 bit 64b x8 Serial Access TIMEKEEPER SRAM (ST Microelectronics)

MKI50-06A7 IGBT Modules H-Bridge (IXYS Corporation)

MKI50-12E7 Short Circuit SOA Capability Square RBSOA (IXYS Corporation)

MKI50-12F7 IGBT Module (IXYS)

MKI75-06A7 IGBT Module (IXYS)

MKI75-06A7T IGBT Module (IXYS)

MKI75-12E8 IGBT Module (IXYS)

TAGS

MKI100-12F8 IGBT Module IXYS

MKI100-12F8 Distributor