MKI50-12F7 Datasheet (IXYS)

MKI50-12F7, IGBT Module

Advanced Technical Information MKI 50-12F7 IGBT Modules H Bridge Short Circuit SOA Capability Square RBSOA IC25 = 65 A V CES = 1200 V VCE(sat) typ.

= 3.2 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 13 19 2 10 16 14 3 11 4 12 17 MKI Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 13 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH V

MKI50-12F7 Features

* Fast NPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits

* HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage curre