MKI75-06A7T Datasheet - IXYS

MKI75-06A7T IGBT Module

MKI 75-06 A7 MKI 75-06 A7T IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA IC25 = 90 A VCES = 600 V VCE(sat) =typ. 2.1 V Type: MKI 75-06 A7 MKI 75-06 A7T NTC - Option: without NTC with NTC 13 T1 D1 T5 D5 1 T 9 2 10 16 14 T T2 D2 T6 D6 3 11 4 12 17 IGBTs Symbol VCES VGES IC25 IC80 RBSOA t SC (SCSOA) Ptot Conditions Maximum Ratings TVJ = 25°C to 150°C 600 V ± 20 V TC = 25°C TC = 80°C 90 60 VGE = ±15 V; RG = 18 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH I.

MKI75-06A7T Features

* NPT IGBT technology

* low saturation voltage

* low switching losses

* switching frequency up to 30 kHz

* square RBSOA, no latch up

* high short circuit capability

* positive temperature coefficient for easy parallelling

* MOS input, v

MKI75-06A7T Datasheet (107.05 KB)

MKI75-06A7T Datasheet Preview — Preview of MKI75-06A7T PDF

Datasheet Details

Part number:

MKI75-06A7T

Manufacturer:

IXYS

File Size:

107.05 KB

Description:

Igbt module.

📁 Related Datasheet

MKI75-06A7 IGBT Module (IXYS)

MKI75-12E8 IGBT Module (IXYS)

MKI100-12E8 IGBT Modules (IXYS)

MKI100-12F8 IGBT Module (IXYS)

MKI41T56 512 bit 64b x8 Serial Access TIMEKEEPER SRAM (ST Microelectronics)

MKI50-06A7 IGBT Modules H-Bridge (IXYS Corporation)

MKI50-12E7 Short Circuit SOA Capability Square RBSOA (IXYS Corporation)

MKI50-12F7 IGBT Module (IXYS)

MKIRF2N65 POWER MOSFET (Global Semiconductor)

MKIRF4N65 POWER MOSFET (Global Semiconductor)

TAGS

MKI75-06A7T IGBT Module IXYS

Image Gallery

MKI75-06A7T Distributor