GSM1912 Datasheet - Globaltech

GSM1912, N-Channel Power MOSFET

GSM1912 20V N-Channel Enhancement Mode MOSFET Product .
GSM1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

* 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V
* 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V
* 20V/1.2A,RDS(ON)=580mΩ@VGS=1.8V
* Low Offset (Error) Voltage
* Low-Voltage Operation
* High-Speed Circuits
* Low Battery Voltage Operation
* SOT-363 package design Ap

GSM1912-Globaltech.pdf