GSM3909VP Datasheet - Globaltech

GSM3909VP P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM3909VP Features

* -30V, -5.1A, RDS(ON)=32mΩ@VGS=-10V

* Improved dv/dt capability

* Fast switching

* Suit for -4.5V Gate Drive Applications

* Green Device Available

* SOT-23-6L package design Applications

* Notebook

* Load Switch

* Battery Prote

GSM3909VP-Globaltech.pdf

GSM3909VP Datasheet Preview — Preview of GSM3909VP PDF

Datasheet Details

Part number:

GSM3909VP

Manufacturer:

Globaltech

File Size:

533.08 KB

Description:

P-channel mosfet.

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