GSM3912P Datasheet - Globaltech

GSM3912P N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM3912P Features

* 30V, 6.5A, RDS(ON)=24mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available

* SOT-23 package design Applications

* MB / VGA / Vcore

* Load Switch

* Hand-Held Instrument Packages

GSM3912P-Globaltech.pdf

GSM3912P Datasheet Preview — Preview of GSM3912P PDF

Datasheet Details

Part number:

GSM3912P

Manufacturer:

Globaltech

File Size:

573.55 KB

Description:

N-channel mosfet.

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GSM3912P GSM3912P N-Channel MOSFET Globaltech

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