GSM3911P Datasheet - Globaltech

GSM3911P 30V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM3911P Features

* -30V, -4.1A, RDS(ON)=55mΩ@VGS=-10V

* Fast switching

* Suit for -4.5V Gate Drive Applications

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments GSM3911P Packages & Pin Assignments

GSM3911P-Globaltech.pdf

GSM3911P Datasheet Preview — Preview of GSM3911P PDF

Datasheet Details

Part number:

GSM3911P

Manufacturer:

Globaltech

File Size:

493.99 KB

Description:

30v p-channel mosfet.

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GSM3911P GSM3911P 30V P-Channel MOSFET Globaltech

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