GSMC3944X - N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
GSMC3944X Features
* 30V, 75A, RDS(ON)=2.4mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* VGS Guarantee ±20V
* Green Device Available
* DFN5X6-8L package design Applications
* Server Power
* DC-DC Load Switch
* Motor Driver Applications
