GSMDC3912Z - N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
GSMDC3912Z Features
* 30V, 25A, RDS(ON)=18mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guaranteed
* Green Device Available
* DFN3X3-8L package design Applications
* MB / VGA / Vcore
* Load Switch
* Hand-Held Instrument Packag
