GSMDC3906X Datasheet - Globaltech

GSMDC3906X N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDC3906X Features

* 30V, 80A, RDS(ON)=5.5mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* DFN5X6-8L package design Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Packages

GSMDC3906X-Globaltech.pdf

GSMDC3906X Datasheet Preview — Preview of GSMDC3906X PDF

Datasheet Details

Part number:

GSMDC3906X

Manufacturer:

Globaltech

File Size:

531.74 KB

Description:

N-channel mosfet.

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GSMDC3906X GSMDC3906X N-Channel MOSFET Globaltech

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