GSMDC3906Z Datasheet - Globaltech

GSMDC3906Z N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDC3906Z Features

* 30V, 60A, RDS(ON)=6mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* DFN3X3-8L package design Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Packages &

GSMDC3906Z-Globaltech.pdf

GSMDC3906Z Datasheet Preview — Preview of GSMDC3906Z PDF

Datasheet Details

Part number:

GSMDC3906Z

Manufacturer:

Globaltech

File Size:

500.06 KB

Description:

N-channel mosfet.

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