GSMDC3903Z Datasheet - Globaltech

GSMDC3903Z P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDC3903Z Features

* -30V, -50A, RDS(ON)=9.5mΩ@VGS=-10V

* Fast switching

* Suit for -4.5V Gate Drive Applications

* ESD HBM Typ. 2KV Available

* Green Device Available

* DFN3X3-8L package design Applications

* MB / VGA / Vcore

* POL Applications

GSMDC3903Z-Globaltech.pdf

GSMDC3903Z Datasheet Preview — Preview of GSMDC3903Z PDF

Datasheet Details

Part number:

GSMDC3903Z

Manufacturer:

Globaltech

File Size:

429.88 KB

Description:

P-channel mosfet.

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