GSMDD03N20 - N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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GSMDD03N20 Features
* 200V, 3A, RDS(ON)=0.85Ω@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guaranteed
* Green Device Available
* TO-252-2L package design Applications
* High efficient switched mode power supplies
* TV Power
* Ada
