GSMDD0966 - N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
GSMDD0966 Features
* 100V, 45A, RDS(ON)=18mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guaranteed
* Green Device Available
* TO-252-2L package design Applications
* Networking
* Load Switch
* LED applications Packages & Pin
