GSMDD0966 Datasheet - Globaltech

GSMDD0966 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDD0966 Features

* 100V, 45A, RDS(ON)=18mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* TO-252-2L package design Applications

* Networking

* Load Switch

* LED applications Packages & Pin

GSMDD0966-Globaltech.pdf

GSMDD0966 Datasheet Preview — Preview of GSMDD0966 PDF

Datasheet Details

Part number:

GSMDD0966

Manufacturer:

Globaltech

File Size:

482.52 KB

Description:

N-channel mosfet.

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