GSMDD0903 - P-Channel MOSFET
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
GSMDD0903 Features
* -100V, -10A, RDS(ON)=140mΩ@VGS=-10V
* VGS Guaranteed ±25V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* TO-252-2L package design Applications
* Networking
* Load Switch
* LED applications Packages &
