GSMDD0903 Datasheet - Globaltech

GSMDD0903 P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDD0903 Features

* -100V, -10A, RDS(ON)=140mΩ@VGS=-10V

* VGS Guaranteed ±25V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* TO-252-2L package design Applications

* Networking

* Load Switch

* LED applications Packages &

GSMDD0903-Globaltech.pdf

GSMDD0903 Datasheet Preview — Preview of GSMDD0903 PDF

Datasheet Details

Part number:

GSMDD0903

Manufacturer:

Globaltech

File Size:

443.57 KB

Description:

P-channel mosfet.

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