GSMDD10N20 - N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
GSMDD10N20 Features
* 200V, 8A, RDS(ON)=400mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* VGS Guaranteed ±25V
* Green Device Available
* TO-252-2L package design Applications
* Notebook
* Load Switch
* LED Applications
* Li Batte
