GSMDD10N20 Datasheet - Globaltech

GSMDD10N20 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDD10N20 Features

* 200V, 8A, RDS(ON)=400mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* VGS Guaranteed ±25V

* Green Device Available

* TO-252-2L package design Applications

* Notebook

* Load Switch

* LED Applications

* Li Batte

GSMDD10N20-Globaltech.pdf

GSMDD10N20 Datasheet Preview — Preview of GSMDD10N20 PDF

Datasheet Details

Part number:

GSMDD10N20

Manufacturer:

Globaltech

File Size:

503.92 KB

Description:

N-channel mosfet.

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GSMDD10N20 GSMDD10N20 N-Channel MOSFET Globaltech

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