GSMDS3903 Datasheet - Globaltech

GSMDS3903 P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDS3903 Features

* -30V, -13A, RDS(ON)=9.5mΩ@VGS=-10V

* Fast switching

* Suit for -4.5V Gate Drive Applications

* Green Device Available

* SOP-8 package design Applications

* MB / VGA / Vcore

* POL Applications

* Load Switch

* LED Application P

GSMDS3903-Globaltech.pdf

GSMDS3903 Datasheet Preview — Preview of GSMDS3903 PDF

Datasheet Details

Part number:

GSMDS3903

Manufacturer:

Globaltech

File Size:

575.63 KB

Description:

P-channel mosfet.

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