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GSMDS3906

N-Channel MOSFET

GSMDS3906 Features

* 30V, 20A, RDS(ON)=6mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* SOP-8 package design Applications

* Notebook

* Load Switch

* LED Applications

* Hand-Held Device Packages & Pin Assignments

GSMDS3906 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDS3906 Datasheet (496.92 KB)

Preview of GSMDS3906 PDF

Datasheet Details

Part number:

GSMDS3906

Manufacturer:

Globaltech

File Size:

496.92 KB

Description:

N-channel mosfet.

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TAGS

GSMDS3906 N-Channel MOSFET Globaltech

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