GSMDS3908 Datasheet - Globaltech

GSMDS3908 - N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDS3908 Features

* 30V, 15A, RDS(ON)=9mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* SOP-8 package design Applications

* Notebook

* Load Switch

* LED Applications

* Hand-Held Device Packages & Pin Assignments

GSMDS3908-Globaltech.pdf