GSMDS3911 Datasheet, Mosfet, Globaltech

GSMDS3911 Features

• Mosfet
• -30V, -5.5A, RDS(ON)=50mΩ@VGS=-10V
• Fast switching
• Suit for -4.5V Gate Drive Applications
• Green Device Available
• SOP-8 package design Ap

PDF File Details

Part number:

GSMDS3911

Manufacturer:

Globaltech

File Size:

553.81kb

Download:

📄 Datasheet

Description:

P-channel mosfet. These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

GSMDS3911 Application

• Applications Features
• -30V, -5.5A, RDS(ON)=50mΩ@VGS=-10V
• Fast switching
• Suit for -4.5V Gate Drive Applications

TAGS

GSMDS3911

Globaltech

📁 Related Datasheet

GSMDS3912 - N-Channel MOSFET (Globaltech)
GSMDS3912 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..

GSMDS3903 - P-Channel MOSFET (Globaltech)
GSMDS3903 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology..

GSMDS3904 - N-Channel MOSFET (Globaltech)
GSMDS3904 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..

GSMDS3906 - N-Channel MOSFET (Globaltech)
GSMDS3906 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..

GSMDS3907 - P-Channel MOSFET (Globaltech)
GSMDS3907 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology..

GSMDS3908 - N-Channel MOSFET (Globaltech)
GSMDS3908 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..

GSMDS3710 - N+P Dual-Channel MOSFET (Globaltech)
GSMDS3710 30V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DM.

GSMDS3807 - Dual P-Channel MOSFET (Globaltech)
GSMDS3807 30V Dual P-Channel MOSFETs Product Description These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS t.

GSMDS3810 - Dual N-Channel MOSFET (Globaltech)
GSMDS3810 30V Dual N-Channel MOSFETs Product Description These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS t.

GSMDS04N15 - N-Channel MOSFET (Globaltech)
GSMDS04N15 150V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technolog.