GSMDS3911 Datasheet - Globaltech

GSMDS3911 - P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDS3911 Features

* -30V, -5.5A, RDS(ON)=50mΩ@VGS=-10V

* Fast switching

* Suit for -4.5V Gate Drive Applications

* Green Device Available

* SOP-8 package design Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-Held Instruments P

GSMDS3911-Globaltech.pdf