GSMDS3911 Datasheet - Globaltech

GSMDS3911 P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDS3911 Features

* -30V, -5.5A, RDS(ON)=50mΩ@VGS=-10V

* Fast switching

* Suit for -4.5V Gate Drive Applications

* Green Device Available

* SOP-8 package design Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-Held Instruments P

GSMDS3911-Globaltech.pdf

GSMDS3911 Datasheet Preview — Preview of GSMDS3911 PDF

Datasheet Details

Part number:

GSMDS3911

Manufacturer:

Globaltech

File Size:

553.81 KB

Description:

P-channel mosfet.

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