Datasheet Specifications
- Part number
- GPT05N65
- Manufacturer
- Greatpower
- File Size
- 1.37 MB
- Datasheet
- GPT05N65-Greatpower.pdf
- Description
- POWER FIELD EFFECT TRANSISTOR
Description
GENERAL .
Features
* This advanced high voltage MOSFET is designed to withstand Higher Current Rating high energy in the avalanche mode and switch efficiently. This Lower Rds(on) new high energy device also offers a drain-to-source diode Lower Capacitances with fast recovery time. Designed for high voltage, highApplications
* such as power supplies, converters, Tighter VSD Specifications power motor controls and bridge circuits. Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View TO-251 Front View TO-252 Front View D GATE DRAIN SOURCE GATE DRAIN SOURCE G 12 3 123 S N-Channel MOSFETGPT05N65 Distributors
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