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GPT05N70 POWER FIELD EFFECT TRANSISTOR

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Description

GPT05N70 POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This advanced high voltage MOSFET is designed to withstand. Higher Current Rating high energy in the avalanche mode and switch effici.

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Datasheet Specifications

Part number
GPT05N70
Manufacturer
Greatpower
File Size
310.10 KB
Datasheet
GPT05N70-Greatpower.pdf
Description
POWER FIELD EFFECT TRANSISTOR

Features

* This advanced high voltage MOSFET is designed to withstand
* Higher Current Rating high energy in the avalanche mode and switch efficiently. This
* Lower Rds(on) new high energy device also offers a drain-to-source diode
* Lower Capacitances with fast recovery time. Designed for high

Applications

* such as power supplies, converters,
* Tighter VSD Specifications power motor controls and bridge circuits.
* Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View TO-251 Front View TO-252 Front View D GATE DRAIN SOURCE GATE DRAIN SOURCE G 12 3 123 S N-Chan

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