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GPT06N60 - POWER FIELD EFFECT TRANSISTOR

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Datasheet Details

Part number	GPT06N60
Manufacturer	Greatpower
File Size	1.37 MB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT06N60-Greatpower.pdf

GPT06N60 Product details

Description

GPT06N60 POWER FIELD EFFECT TRANSISTOR

Features

This advanced high voltage MOSFET is designed to withstand Higher Current Rating high energy in the avalanche mode and switch efficiently. This Lower Rds(on) new high energy device also offers a drain-to-source diode Lower Capacitances with fast recovery time. Designed for high voltage, high speed Lower Total Gate Charge switching.

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Published: Nov 8, 2017 |