BCF30
Guangdong Kexin
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(bcf29 / bcf30) pnp general purpose transistors.
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BCF30 - PNP general purpose transistors
(NXP)
DISCRETE SEMICONDUCTORS
..
DATA SHEET
book, halfpage
M3D088
BCF29; BCF30 PNP general purpose transistors
Product specification Supe.
BCF30 - Surface mount Si-Epitaxial PlanarTransistors
(Diotec Semiconductor)
BCF 29, BFC 30 PNP ..
General Purpose Transistors PNP
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren .
BCF32 - NPN general purpose transistor
(NXP)
.
BCF32 - Surface mount Si-Epitaxial PlanarTransistors
(Diotec Semiconductor)
.
BCF33 - Surface mount Si-Epitaxial PlanarTransistors
(Diotec Semiconductor)
.
BCF020T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
(BeRex)
BCF020T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm)
The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
BCF030T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
(BeRex)
BCF030T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm)
The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
BCF040T - HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
(BeRex)
BCF040T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm)
The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
BCF060T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
(BeRex)
BCF060T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)
The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
BCF080T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
(BeRex)
BCF080T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm)
The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
