HM100N03KA - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Part number	HM100N03KA
Manufacturer	H&M Semiconductor
File Size	700.42 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM100N03KA Datasheet
Additional preview pages of the HM100N03KA datasheet.

The HM100N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =30V,ID =100A RDS(ON) = 3.6mΩ (typical) @ VGS= 10V RDS(ON) = 5.2mΩ (typical) @ VGS= 4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram HM100N03KA.

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Published: Aug 12, 2025 |