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HM2309 Datasheet - H&M Semiconductor

HM2309 P-Channel Enhancement Mode Power MOSFET

HM2309 Features

* RDS(ON)≦215mΩ@VGS=-10V

* RDS(ON)≦260mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Capable doing Cu wire bonding APPLICATIONS

* Power Management

* Portable Equipment

* Battery P

HM2309-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM2309

Manufacturer:

H&M Semiconductor

File Size:

810.58 KB

Description:

P-channel enhancement mode power mosfet.

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HM2309 HM2309 P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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