HM2309 - P-Channel Enhancement Mode Power MOSFET
HM2309 Features
* RDS(ON)≦215mΩ@VGS=-10V
* RDS(ON)≦260mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding APPLICATIONS
* Power Management
* Portable Equipment
* Battery P
