Datasheet Details
- Part number
- HM2309
- Manufacturer
- H&M Semiconductor
- File Size
- 810.58 KB
- Datasheet
- HM2309-HMSemiconductor.pdf
- Description
- P-Channel Enhancement Mode Power MOSFET
HM2309 Description
HM2309 P-Channel 60V(D-S) GENERAL .
The HM2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
HM2309 Features
* RDS(ON)≦215mΩ@VGS=-10V
* RDS(ON)≦260mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
HM2309 Applications
* Power Management
* Portable Equipment
* Battery Powered System
* Load Switch
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage
Gate-Source Voltage
Symbol VDS
VGS
Maximum Ratings
-60
±20
Unit V
V
Marking and pin Assignment
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