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HM2309 - P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2309 P-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2309

Datasheet Details

Part number	HM2309
Manufacturer	H&M Semiconductor
File Size	810.58 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM2309 Datasheet
Additional preview pages of the HM2309 datasheet.

Product details

Description

The HM2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦215mΩ@VGS=-10V.
RDS(ON)≦260mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding.

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Other Datasheets by H&M Semiconductor

HM2309A - P-Channel Enhancement Mode Power MOSFET
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Published: Nov 27, 2018 |