HM2300 Datasheet - H&M Semiconductor

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HM2300 N-Channel Enhancement Mode Power MOSFET

HM2300 N-Channel Enhancement Mode Power MOSFET .
The HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM2300-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM2300

Manufacturer:

H&M Semiconductor

File Size:

453.70 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired

HM2300 Distributors

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HM2300 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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