Datasheet4U Logo Datasheet4U.com

HM2300D

N-Channel Enhancement Mode Power MOSFET

HM2300D Features

* VDS = 20V,ID = 6.0A RDS(ON) < 38mΩ @ VGS=2.5V RDS(ON) < 25mΩ @ VGS=4.5V

* High power and current handing capability

* Lead free product is acquired

* Surface mount package D G S Schematic diagram 2300D Marking and pin assignment Application

* Battery protection

* Load switc

HM2300D Datasheet (425.23 KB)

Preview of HM2300D PDF

Datasheet Details

Part number:

HM2300D

Manufacturer:

H&M Semiconductor

File Size:

425.23 KB

Description:

N-channel enhancement mode power mosfet.

📁 Related Datasheet

HM2300 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2300 N-Channel Enhancement Mode Power MOSFET Description The HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

HM2300B - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2300B N-Channel Enhancement Mode Power MOSFET Description The HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge.

HM2300C - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2300C N-Channel Enhancement Mode Power MOSFET Description The HM2300C uses advanced trench technology to provide excellent RDS(ON), low gate charge.

HM2300DR - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2300DR N-Channel Enhancement Mode Power MOSFET Description The HM2300DR uses advanced trench technology to provide excellent RDS(ON), low gate char.

HM2300PR - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2300PR N-Channel Enhancement Mode Power MOSFET Description The HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate char.

HM2301 - Digital-output humidity and temperature sensor (Hanwei)
  HM2301 Digital-output humidity and temperature sensor                          Data sheet HM2301 Digital-output humidity and temperature sensor F.

HM2301A - P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge.

HM2301B - P-Channel Trench Power MOSFET (H&M Semiconductor)
HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge.

TAGS

HM2300D N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

Image Gallery

HM2300D Datasheet Preview Page 2 HM2300D Datasheet Preview Page 3

HM2300D Distributor